MARC details
| 000 -LEADER |
|---|
| fixed length control field |
04709nam a22005055i 4500 |
| 003 - CONTROL NUMBER IDENTIFIER |
|---|
| control field |
TR-AnTOB |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
|---|
| control field |
20231123170200.0 |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
|---|
| fixed length control field |
cr nn 008mamaa |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
|---|
| fixed length control field |
211125s2022 si | s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
9789811661204 |
| 024 7# - OTHER STANDARD IDENTIFIER |
|---|
| Standard number or code |
10.1007/978-981-16-6120-4 |
| Source of number or code |
doi |
| 040 ## - CATALOGING SOURCE |
|---|
| Original cataloging agency |
TR-AnTOB |
| Language of cataloging |
eng |
| Description conventions |
rda |
| Transcribing agency |
TR-AnTOB |
| 041 ## - LANGUAGE CODE |
|---|
| Language code of text/sound track or separate title |
İngilizce |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
|---|
| Classification number |
TK7871.99.M44 |
| 072 #7 - SUBJECT CATEGORY CODE |
|---|
| Subject category code |
TJFC |
| Source |
bicssc |
|
|---|
| Subject category code |
TEC008010 |
| Source |
bisacsh |
|
|---|
| Subject category code |
TJFC |
| Source |
thema |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
|---|
| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
TK7871.99.M44EBK |
| 245 10 - TITLE STATEMENT |
|---|
| Title |
Recent Advances in PMOS Negative Bias Temperature Instability |
| Medium |
[electronic resource] : |
| Remainder of title |
Characterization and Modeling of Device Architecture, Material and Process Impact / |
| Statement of responsibility, etc. |
edited by Souvik Mahapatra. |
| 250 ## - EDITION STATEMENT |
|---|
| Edition statement |
1st ed. 2022. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
|---|
| Place of production, publication, distribution, manufacture |
Singapore : |
| Name of producer, publisher, distributor, manufacturer |
Springer Nature Singapore : |
| -- |
Imprint: Springer, |
| Date of production, publication, distribution, manufacture, or copyright notice |
2022. |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
1 online resource |
| 336 ## - CONTENT TYPE |
|---|
| Content type term |
text |
| Content type code |
txt |
| Source |
rdacontent |
| 337 ## - MEDIA TYPE |
|---|
| Media type term |
computer |
| Media type code |
c |
| Source |
rdamedia |
| 338 ## - CARRIER TYPE |
|---|
| Carrier type term |
online resource |
| Carrier type code |
cr |
| Source |
rdacarrier |
| 347 ## - DIGITAL FILE CHARACTERISTICS |
|---|
| File type |
text file |
| Encoding format |
PDF |
| Source |
rda |
| 505 0# - FORMATTED CONTENTS NOTE |
|---|
| Formatted contents note |
Characterization of NBTI Parametric Drift -- BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs -- BTI Analysis Tool (BAT) Model Framework -- BAT Framework Modeling of RMG HKMG SOI FinFETs -- BAT Framework Modeling of RMG HKMG GAA-SNS FETs -- BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs -- BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs -- BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency -- BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs -- BTI Analysis Tool (BAT) Model Framework – Generation of Interface Traps -- Device Architecture, Material and Process Dependencies of NBTI Parametric Drift -- Physical Mechanism of NBTI Parametric Drift -- BAT Framework Modeling of Gate First HKMG Si-capped SiGe Channel MOSFETs -- BTI Analysis Tool (BAT) Model Framework – Interface Trap Occupancy and Hole Trapping. |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc. |
This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Electronic circuits. |
|
|---|
| Topical term or geographic name entry element |
Electronics. |
|
|---|
| Topical term or geographic name entry element |
Solid state physics. |
|
|---|
| Topical term or geographic name entry element |
Electronic Circuits and Systems. |
|
|---|
| Topical term or geographic name entry element |
Electronics and Microelectronics, Instrumentation. |
|
|---|
| Topical term or geographic name entry element |
Electronic Devices. |
| 653 #0 - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
Metal oxide semiconductors, Complementary -- Effect of temperature on |
|
|---|
| Uncontrolled term |
Metal oxide semiconductors, Complementary -- Reliability |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Mahapatra, Souvik. |
| Relator term |
editor. |
| Relator code |
edt |
| -- |
http://id.loc.gov/vocabulary/relators/edt |
| 710 2# - ADDED ENTRY--CORPORATE NAME |
|---|
| Corporate name or jurisdiction name as entry element |
SpringerLink (Online service) |
| 856 40 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Uniform Resource Identifier |
<a href="https://doi.org/10.1007/978-981-16-6120-4">https://doi.org/10.1007/978-981-16-6120-4</a> |
| Materials specified |
Springer eBooks |
| Public note |
Online access link to the resource |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
|---|
| Source of classification or shelving scheme |
Library of Congress Classification |
| Koha item type |
E-Book |
