MARC details
000 -LEADER |
fixed length control field |
03349nam a22005295i 4500 |
003 - CONTROL NUMBER IDENTIFIER |
control field |
TR-AnTOB |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20231121102500.0 |
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
fixed length control field |
cr nn 008mamaa |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
211213s2022 sz | s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
9783030895143 |
024 7# - OTHER STANDARD IDENTIFIER |
Standard number or code |
10.1007/978-3-030-89514-3 |
Source of number or code |
doi |
040 ## - CATALOGING SOURCE |
Original cataloging agency |
TR-AnTOB |
Language of cataloging |
eng |
Transcribing agency |
TR-AnTOB |
Description conventions |
rda |
041 ## - LANGUAGE CODE |
Language code of text/sound track or separate title |
İngilizce |
050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
Classification number |
QC589 |
072 #7 - SUBJECT CATEGORY CODE |
Subject category code |
TJFC |
Source |
bicssc |
|
Subject category code |
TJFC |
Source |
bicssc |
|
Subject category code |
TEC008010 |
Source |
bisacsh |
|
Subject category code |
TJFC |
Source |
thema |
|
Subject category code |
TJFC |
Source |
thema |
090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
QC589EBK |
100 1# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Freeman, Yuri. |
Relator term |
author. |
Relator code |
aut |
-- |
http://id.loc.gov/vocabulary/relators/aut |
245 10 - TITLE STATEMENT |
Title |
Tantalum and Niobium-Based Capacitors |
Medium |
[electronic resource] : |
Remainder of title |
Science, Technology, and Applications / |
Statement of responsibility, etc. |
by Yuri Freeman. |
250 ## - EDITION STATEMENT |
Edition statement |
2nd ed. 2022. |
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
Place of production, publication, distribution, manufacture |
Cham : |
Name of producer, publisher, distributor, manufacturer |
Springer International Publishing : |
-- |
Imprint: Springer, |
Date of production, publication, distribution, manufacture, or copyright notice |
2022. |
300 ## - PHYSICAL DESCRIPTION |
Extent |
1 online resource |
336 ## - CONTENT TYPE |
Content type term |
text |
Content type code |
txt |
Source |
rdacontent |
337 ## - MEDIA TYPE |
Media type term |
computer |
Media type code |
c |
Source |
rdamedia |
338 ## - CARRIER TYPE |
Carrier type term |
online resource |
Carrier type code |
cr |
Source |
rdacarrier |
347 ## - DIGITAL FILE CHARACTERISTICS |
File type |
text file |
Encoding format |
PDF |
Source |
rda |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
Introduction -- 1: Major Degradation Mechanisms -- 2: Basic Technology -- 3: Applications -- 4: Conclusion. |
520 ## - SUMMARY, ETC. |
Summary, etc. |
This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc. Provides a single-source reference to the science, technology, and applications of Tantalum and Niobium-based capacitors; Focuses on Polymer Tantalum capacitors, with rapidly growing applications in special and commercial electronics; Discusses in detail conduction and degradation mechanisms in amorphous dielectrics and multilayer capacitor structures with amorphous dielectrics, such as metal-insulator-semiconductor (MIS) structures with inorganic and organic semiconductors, as well as MOSFET transistors with high k dielectrics. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Electronic circuits. |
|
Topical term or geographic name entry element |
Electronics. |
|
Topical term or geographic name entry element |
Electronic Circuits and Systems. |
|
Topical term or geographic name entry element |
Electronic Circuits and Systems. |
|
Topical term or geographic name entry element |
Electronics and Microelectronics, Instrumentation. |
653 #0 - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Capacitors |
|
Uncontrolled term |
Capacitors -- Materials |
710 2# - ADDED ENTRY--CORPORATE NAME |
Corporate name or jurisdiction name as entry element |
SpringerLink (Online service) |
856 40 - ELECTRONIC LOCATION AND ACCESS |
Uniform Resource Identifier |
<a href="https://doi.org/10.1007/978-3-030-89514-3">https://doi.org/10.1007/978-3-030-89514-3</a> |
Materials specified |
Springer eBooks |
Public note |
Online access link to the resource |
942 ## - ADDED ENTRY ELEMENTS (KOHA) |
Source of classification or shelving scheme |
Library of Congress Classification |
Koha item type |
E-Book |