Tantalum and Niobium-Based Capacitors (Record no. 200457905)

MARC details
000 -LEADER
fixed length control field 03349nam a22005295i 4500
003 - CONTROL NUMBER IDENTIFIER
control field TR-AnTOB
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20231121102500.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 211213s2022 sz | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783030895143
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-3-030-89514-3
Source of number or code doi
040 ## - CATALOGING SOURCE
Original cataloging agency TR-AnTOB
Language of cataloging eng
Transcribing agency TR-AnTOB
Description conventions rda
041 ## - LANGUAGE CODE
Language code of text/sound track or separate title İngilizce
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC589
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFC
Source bicssc
Subject category code TJFC
Source bicssc
Subject category code TEC008010
Source bisacsh
Subject category code TJFC
Source thema
Subject category code TJFC
Source thema
090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN)
Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) QC589EBK
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Freeman, Yuri.
Relator term author.
Relator code aut
-- http://id.loc.gov/vocabulary/relators/aut
245 10 - TITLE STATEMENT
Title Tantalum and Niobium-Based Capacitors
Medium [electronic resource] :
Remainder of title Science, Technology, and Applications /
Statement of responsibility, etc. by Yuri Freeman.
250 ## - EDITION STATEMENT
Edition statement 2nd ed. 2022.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Cham :
Name of producer, publisher, distributor, manufacturer Springer International Publishing :
-- Imprint: Springer,
Date of production, publication, distribution, manufacture, or copyright notice 2022.
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
347 ## - DIGITAL FILE CHARACTERISTICS
File type text file
Encoding format PDF
Source rda
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Introduction -- 1: Major Degradation Mechanisms -- 2: Basic Technology -- 3: Applications -- 4: Conclusion.
520 ## - SUMMARY, ETC.
Summary, etc. This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc. Provides a single-source reference to the science, technology, and applications of Tantalum and Niobium-based capacitors; Focuses on Polymer Tantalum capacitors, with rapidly growing applications in special and commercial electronics; Discusses in detail conduction and degradation mechanisms in amorphous dielectrics and multilayer capacitor structures with amorphous dielectrics, such as metal-insulator-semiconductor (MIS) structures with inorganic and organic semiconductors, as well as MOSFET transistors with high k dielectrics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Electronic circuits.
Topical term or geographic name entry element Electronics.
Topical term or geographic name entry element Electronic Circuits and Systems.
Topical term or geographic name entry element Electronic Circuits and Systems.
Topical term or geographic name entry element Electronics and Microelectronics, Instrumentation.
653 #0 - INDEX TERM--UNCONTROLLED
Uncontrolled term Capacitors
Uncontrolled term Capacitors -- Materials
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.1007/978-3-030-89514-3">https://doi.org/10.1007/978-3-030-89514-3</a>
Materials specified Springer eBooks
Public note Online access link to the resource
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Library of Congress Classification
Koha item type E-Book
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Not for loan Collection code Home library Current library Date acquired Source of acquisition Inventory number Total Checkouts Full call number Barcode Date last seen Copy number Date shelved Koha item type Public note
    Library of Congress Classification Geçerli değil-e-Kitap / Not applicable-e-Book E-Kitap Koleksiyonu Merkez Kütüphane Merkez Kütüphane 11/10/2023 Satın Alma / Purchase ELE   QC589EBK EBK02772 21/11/2023 1 21/11/2023 E-Book
Devinim Yazılım Eğitim Danışmanlık tarafından Koha'nın orjinal sürümü uyarlanarak geliştirilip kurulmuştur.