MARC details
000 -LEADER |
fixed length control field |
03499nam a22005535i 4500 |
003 - CONTROL NUMBER IDENTIFIER |
control field |
TR-AnTOB |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20231113114655.0 |
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
fixed length control field |
cr nn 008mamaa |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
211217s2022 sz | s |||| 0|eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
9783030777302 |
024 7# - OTHER STANDARD IDENTIFIER |
Standard number or code |
10.1007/978-3-030-77730-2 |
Source of number or code |
doi |
040 ## - CATALOGING SOURCE |
Original cataloging agency |
TR-AnTOB |
Language of cataloging |
eng |
Description conventions |
rda |
Transcribing agency |
TR-AnTOB |
041 ## - LANGUAGE CODE |
Language code of text/sound track or separate title |
İngilizce |
050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
Classification number |
TK7871.95 |
072 #7 - SUBJECT CATEGORY CODE |
Subject category code |
TJFC |
Source |
bicssc |
|
Subject category code |
TJFC |
Source |
bicssc |
|
Subject category code |
TEC008010 |
Source |
bisacsh |
|
Subject category code |
TJFC |
Source |
thema |
|
Subject category code |
TJFC |
Source |
thema |
090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
TK7871.95EBK |
100 1# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Khandelwal, Sourabh. |
Relator term |
author. |
Relator code |
aut |
-- |
http://id.loc.gov/vocabulary/relators/aut |
245 10 - TITLE STATEMENT |
Title |
Advanced SPICE Model for GaN HEMTs (ASM-HEMT) |
Medium |
[electronic resource] : |
Remainder of title |
A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design / |
Statement of responsibility, etc. |
by Sourabh Khandelwal. |
250 ## - EDITION STATEMENT |
Edition statement |
1st ed. 2022. |
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
Place of production, publication, distribution, manufacture |
Cham : |
Name of producer, publisher, distributor, manufacturer |
Springer International Publishing : |
-- |
Imprint: Springer, |
Date of production, publication, distribution, manufacture, or copyright notice |
2022. |
300 ## - PHYSICAL DESCRIPTION |
Extent |
1 online resource |
336 ## - CONTENT TYPE |
Content type term |
text |
Content type code |
txt |
Source |
rdacontent |
337 ## - MEDIA TYPE |
Media type term |
computer |
Media type code |
c |
Source |
rdamedia |
338 ## - CARRIER TYPE |
Carrier type term |
online resource |
Carrier type code |
cr |
Source |
rdacarrier |
347 ## - DIGITAL FILE CHARACTERISTICS |
File type |
text file |
Encoding format |
PDF |
Source |
rda |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
Introduction -- GaN Device Operation -- Introduction to device modeling -- Industry standard ASM-HEMT compact model – Introduction -- Core charge and current model in ASM-HEMT model -- Real device effects model in ASM-HEMT model -- Radio-frequency GaN modeling with ASM-HEMT model -- Power GaN device modeling with ASM-HEMT model -- Model quality testing -- Design-Technology Co-optimization with ASM-HEMT model. |
520 ## - SUMMARY, ETC. |
Summary, etc. |
This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Electronic circuits. |
|
Topical term or geographic name entry element |
Cooperating objects (Computer systems). |
|
Topical term or geographic name entry element |
Electronic Circuits and Systems. |
|
Topical term or geographic name entry element |
Cyber-Physical Systems. |
|
Topical term or geographic name entry element |
Electronic Circuits and Systems. |
653 #0 - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Gallium nitride |
|
Uncontrolled term |
Modulation-doped field-effect transistors |
|
Uncontrolled term |
Radio frequency integrated circuits |
|
Uncontrolled term |
Semiconductors |
710 2# - ADDED ENTRY--CORPORATE NAME |
Corporate name or jurisdiction name as entry element |
SpringerLink (Online service) |
856 40 - ELECTRONIC LOCATION AND ACCESS |
Uniform Resource Identifier |
<a href="https://doi.org/10.1007/978-3-030-77730-2">https://doi.org/10.1007/978-3-030-77730-2</a> |
Materials specified |
Springer eBooks |
Public note |
Online access link to the resource |
942 ## - ADDED ENTRY ELEMENTS (KOHA) |
Source of classification or shelving scheme |
Library of Congress Classification |
Koha item type |
E-Book |