000 | 02782cam a22003614a 4500 | ||
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001 | 49619438 | ||
003 | OCoLC | ||
005 | 20230929213050.0 | ||
008 | 020405t20032003njua b 001 0 eng | ||
020 |
_a013061792X _q(pbk.) |
||
020 |
_a9780130617927 _q(pbk.) |
||
035 | _a(OCoLC)49619438 | ||
040 |
_aDLC _beng _cDLC _dBAKER _dBTCTA _dYDXCP _dUQ1 _dIG# _dZWZ _dHEBIS _dDEBBG _dOCL _dEXW _dDEBSZ _dOCLCF _dOCLCO _dOCLCQ _dRBN _dUtOrBLW |
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042 | _apcc | ||
050 | 0 | 0 |
_aTK7871.85 _b.P483 2003 |
100 | 1 | _aPierret, Robert F | |
245 | 1 | 0 |
_aAdvanced semiconductor fundamentals / _cRobert F. Pierret |
250 | _aSecond edition | ||
264 | 1 |
_aUpper Saddle River, N.J. : _bPrentice Hall, _c[2003] |
|
264 | 4 | _c©2003 | |
300 |
_ax, 221 pages : _billustrations ; _c24 cm |
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336 |
_atext _btxt _2rdacontent |
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337 |
_aunmediated _bn _2rdamedia |
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338 |
_avolume _bnc _2rdacarrier |
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490 | 1 |
_aModular series on solid state devices ; _vv. 6 |
|
504 | _aIncludes bibliographical references and index | ||
505 | 0 | 0 |
_tBasic Semiconductor Properties -- _tGeneral Material Properties -- _tCrystal Structure -- _tThe Unit Cell Concept -- _tSimple 3-D Unit Cells -- _tBravais Lattices and Crystal Systems -- _tSpecific Semiconductor Lattices -- _tMiller Indices -- _tExample Use of Miller Indices -- _tWafer Surface Orientation -- _tWafer Flats and Notches -- _tPattern Alignment -- _tElements of Quantum Mechanics -- _tThe Quantum Concept -- _tBlackbody Radiation -- _tThe Bohr Atom -- _tWave-Particle Duality -- _tBasic Formalism -- _tGeneral Formulation -- _tTime-Independent Formulation -- _tSimple Problem Solutions -- _tThe Free Particle -- _tParticle in a 1-D Box -- _tFinite Potential Well -- _tEnergy Band Theory -- _tPreliminary Considerations -- _tSimplifying Assumptions -- _tThe Bloch Theorem -- _tApproximate One-Dimensional Analysis -- _tKronig-Penney Model -- _tMathematical Solution -- _tEnergy Bands and Brillouin Zones -- _tParticle Motion and Effective Mass -- _tCarriers and Current -- _tExtrapolation of Concepts to Three Dimensions -- _tBrillouin Zones -- _tE-k Diagrams -- _tConstant-Energy Surfaces -- _tEffective Mass -- _tGe, Si, and GaAs -- _tMeasurement -- _tBand Gap Energy -- _tEquilibrium Carrier Statistics -- _tDensity of States -- _tGeneral Derivation -- _tSpecific Materials -- _tConduction Band--GaAs -- _tConduction Band--Si, Ge -- _tValence Band--Ge, Si, GaAs -- _tFermi Function -- _tProblem Specification -- _tDerivation Proper -- _tConcluding Discussion -- _tSupplemental Information -- _tEquilibrium Distribution of Carriers -- _tThe Energy Band Diagram -- _tDonors, Acceptors, Band Gap Centers |
650 | 0 | _aSemiconductors | |
655 | 7 |
_aLehrbuch. _2swd |
|
655 | 4 | _aLehrbuch | |
830 | 0 |
_aModular series on solid state devices (Upper Saddle River, N.J.) ; _vv. 6 |
|
999 |
_c200454680 _d72892 |