000			03018nam a22004935i 4500
999			_c200457951 _d76163
003			TR-AnTOB
005			20231124101111.0
007			cr nn 008mamaa
008			211215s2022 sz | s |||| 0|eng d
020			_a9783030777753
024	7		_a10.1007/978-3-030-77775-3 _2doi
040			_aTR-AnTOB _beng _erda _cTR-AnTOB
041			_aeng
050		4	_aTK7871.95
072		7	_aTJFC _2bicssc
072		7	_aTEC008010 _2bisacsh
072		7	_aTJFC _2thema
090			_aTK7871.95EBK
100	1		_aJenkins, Keith A. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut
245	1	0	_aRF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors _h[electronic resource] / _cby Keith A. Jenkins.
250			_a1st ed. 2022.
264		1	_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2022.
300			_a1 online resource
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
505	0		_aIntroduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.
520			_aThis book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics. .
650		0	_aElectronic circuits.
650		0	_aElectronics.
650		0	_aTelecommunication.
650	1	4	_aElectronic Circuits and Systems.
650	2	4	_aElectronics and Microelectronics, Instrumentation.
650	2	4	_aMicrowaves, RF Engineering and Optical Communications.
653		0	_aField-effect transistors
710	2		_aSpringerLink (Online service)
856	4	0	_uhttps://doi.org/10.1007/978-3-030-77775-3 _3Springer eBooks _zOnline access link to the resource
942			_2lcc _cEBK