000			01516 a2200313 4500
999			_c73360 _d21597
001			73360
003			TR-AnTOB
005			20200505114445.0
008			090109s2004 nyua 001 0 eng
020			_a0471232793
040			_aCQU _cCQU _dBGU
041			_aeng
049			_aOSUU
050			_aTK7871.85 _b.M39 2004
090			_aTK7871.85 .M39 2004
100			_aMay, Gary S. _951156
245		0	_aFundamentals of semiconductor fabrication / _cGary S. May, Simon M. Sze.
264		1	_aNew York: _bWiley, _cc2004.
300			_axiii, 305 p. : _bill. ; _c26 cm.
504			_aIncludes index.
505		0	_aCh.1. _gCh.2. _gCh.3.Silicon Oxidation-- _gCh.4. _gCh.5. _gCh.6 _gCh.7.t _gCh.8. _gCh.9. _gCh.10. _gCh.11. _tIntroduction-- _tCrystal Growth-- _tPhotolithography-- _tEtching-- _tDiffusion-- _tFilm Deposition-- _tProcess Integration-- _tIC Manufacturing-- _tFuture Trends and Challenges App. B International System of Units (SI Units) App. C Unit Prefixes App. D Greek Alphabet App. E Physical Constants App. F Properties of Si and GaAs at 300 K App. G Some Properties of the Error Function App. H Basic Kinetic Theory of Gases App. I SUPREM Commands App. J Running PROLITH App. K Percentage Points of the t Distribution App. L Percentage Points of the F Distribution
650			_aYarı iletkenler _xTasarım ve yapım _921751
650			_aSemiconductors _xDesign and construction _9889
700			_aSze, Simon M., _d1936- _951157
902			_a0027705
903			_aMerkez Kütüphane
942			_cBK _2lcc
945			_aKntrl CS